Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate

GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted much attention owing to the low-cost and large area availability of Si substrate. In this paper, 90-nm-gate-length InAlN/GaN HEMT was fabricated device electrical properties were studied. The presents a low drain-induced barrier lowing (DIBL) 43 mV/V, parasitic source resistance (RS) 0.91 ??mm, peak intrinsic transconductance (gm0) 553 mS/mm. To best our knowledge, is lowest DIBL value among reported HMET with gate length (Lg) below 100 nm. low-filed two-dimensional electron gas (2DEG) mobility (?n) extracted dominated polarization Coulomb field scattering contributed increased ?n density (n2D). A current gain cutoff frequency (fT) 175 GHz achieved HEMTs 90-nm.